The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2010

Filed:

Dec. 03, 2004
Applicants:

Masaru Sasaki, Amagasaki, JP;

Shinji Ide, Amagasaki, JP;

Shigenori Ozaki, Amagasaki, JP;

Inventors:

Masaru Sasaki, Amagasaki, JP;

Shinji Ide, Amagasaki, JP;

Shigenori Ozaki, Amagasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of cleaning a semiconductor substrate conductive layer surface that can remove a residual organic material and a natural oxide satisfactorily and does not adversely affect a k value without damaging the side-wall insulation film of a via hole. A semiconductor device, including insulation films formed on the surface of a conductive layer of a semiconductor substrate and a via hole formed in an insulation film to partly expose the conductive layer, is carried into a reaction vessel, plasma including hydrogen is generated in the reaction vessel to clean the surface of the conductive layer at the bottom of the via hole, a residual organic material is decomposed and removed by ashing, and a copper oxide film on the surface of the conductive layer is reduced to Cu.


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