The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Jan. 04, 2008
Beak-hyung Cho, Hwaseong-si, KR;
Do-eung Kim, Yongin-si, KR;
Choong-keun Kwak, Suwon-si, KR;
Sang-beom Kang, Hwaseong-si, KR;
Woo-yeong Cho, Hwaseong-si, KR;
Hyung-rok OH, Seongnam-si, KR;
Beak-Hyung Cho, Hwaseong-si, KR;
Do-Eung Kim, Yongin-si, KR;
Choong-Keun Kwak, Suwon-si, KR;
Sang-Beom Kang, Hwaseong-si, KR;
Woo-Yeong Cho, Hwaseong-si, KR;
Hyung-Rok Oh, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A method of biasing a memory cell array during a data writing operation and a semiconductor memory device, in which the semiconductor memory device includes: a memory cell array including a plurality of memory cells in which a first terminal of a memory cell is connected to a corresponding first line among a plurality of first lines and a second terminal of a memory cell is connected to a corresponding second line among a plurality of second lines; and a bias circuit for biasing a selected second line to a first voltage and non-selected second lines to a second voltage.