The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2010

Filed:

Sep. 02, 2008
Applicants:

Cormac Macnamara, Belfast, GB;

Conor Brogan, Belfast, GB;

Hiugh J. Griffin, Newtownabbey, GB;

Robin Wilson, Belfast, GB;

Inventors:

Cormac MacNamara, Belfast, GB;

Conor Brogan, Belfast, GB;

Hiugh J. Griffin, Newtownabbey, GB;

Robin Wilson, Belfast, GB;

Assignee:

Icemos Technology Ltd., Belfast, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/12 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor device includes providing a semiconductor substrate having first and second main surfaces opposite to each other. A trench is formed in the semiconductor substrate at the first main surface. The trench extends to a first depth position in the semiconductor substrate. The trench is lined with the dielectric material. The trench is filled with a conductive material. An electrical component is electrically connected to the conductive material exposed at the first main surface. A cap is mounted to the first main surface. The cap encloses the electrical component and the electrical connection.


Find Patent Forward Citations

Loading…