The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Apr. 22, 2004
Andreas Stricker, Essex Junction, VT (US);
David Sheridan, Williston, VT (US);
Jae-sung Rieh, Fishkill, NY (US);
Gregory Freeman, Hopewell Junction, NY (US);
Steven Voldman, Burlington, NY (US);
Stephen A. St. Onge, Colchester, VT (US);
Andreas Stricker, Essex Junction, VT (US);
David Sheridan, Williston, VT (US);
Jae-Sung Rieh, Fishkill, NY (US);
Gregory Freeman, Hopewell Junction, NY (US);
Steven Voldman, Burlington, NY (US);
Stephen A. St. Onge, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate. In addition, this structure includes an active area (collector) above the sub-collector, a base above the active area, and an emitter above the base. The distance between the discontinuous portions of the discontinuous sub-collector tunes the performance characteristics of the semiconductor structure. The performance characteristics that are tunable include breakdown voltage, unity current gain cutoff frequency, unity power gain cutoff frequency, transit frequency, current density, capacitance range, noise injection, minority carrier injection and trigger and holding voltage.