The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Feb. 22, 2008
Hemant P. Mungekar, Campbell, CA (US);
Young S. Lee, San Jose, CA (US);
Agnieszka Jakubowicz, Los Gatos, CA (US);
Zhong Qiang Hua, Saratoga, CA (US);
Rionard Purnawan, Mountain View, CA (US);
Sanjay Kamath, Fremont, CA (US);
Walter Zygmunt, San Jose, CA (US);
Hemant P. Mungekar, Campbell, CA (US);
Young S. Lee, San Jose, CA (US);
Agnieszka Jakubowicz, Los Gatos, CA (US);
Zhong Qiang Hua, Saratoga, CA (US);
Rionard Purnawan, Mountain View, CA (US);
Sanjay Kamath, Fremont, CA (US);
Walter Zygmunt, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.