The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Aug. 12, 2004
Yasuo Kobayashi, Nirasaki, JP;
Kohei Kawamura, Nirasaki, JP;
Tadahiro Ohmi, Aoba-Ku, Sendai-Shi, Miyagi-Ken, JP;
Akinobu Teramoto, Sendai, JP;
Tatsuya Sugimoto, Tokyo-To, JP;
Toshiro Yamada, Tokyo-To, JP;
Kimiaki Tanaka, Tokyo-To, JP;
Yasuo Kobayashi, Nirasaki, JP;
Kohei Kawamura, Nirasaki, JP;
Tadahiro Ohmi, Aoba-Ku, Sendai-Shi, Miyagi-Ken, JP;
Akinobu Teramoto, Sendai, JP;
Tatsuya Sugimoto, Tokyo-To, JP;
Toshiro Yamada, Tokyo-To, JP;
Kimiaki Tanaka, Tokyo-To, JP;
Abstract
The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.