The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Nov. 15, 2005
Toshitaka Shimamoto, Osaka, JP;
Yasutoshi Kawaguchi, Osaka, JP;
Yoshiaki Hasegawa, Shiga, JP;
Akihiko Ishibashi, Osaka, JP;
Isao Kidoguchi, Hyogo, JP;
Toshiya Yokogawa, Nara, JP;
Toshitaka Shimamoto, Osaka, JP;
Yasutoshi Kawaguchi, Osaka, JP;
Yoshiaki Hasegawa, Shiga, JP;
Akihiko Ishibashi, Osaka, JP;
Isao Kidoguchi, Hyogo, JP;
Toshiya Yokogawa, Nara, JP;
Panasonic Corporation, Kadoma, JP;
Abstract
A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structurewith electrical conductivity. The principal surface of the substrate structurehas at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum ΣX of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum ΣY of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality ΣX/ΣY>1.0.