The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Jun. 18, 2007
Applicants:
Hitoshi Morisaki, Tokyo, JP;
Yasushi Kamiya, Tokyo, JP;
Shuji Nomura, Tokyo, JP;
Masahiro Totuka, Tokyo, JP;
Tomoki Oku, Tokyo, JP;
Ryo Hattori, Tokyo, JP;
Inventors:
Hitoshi Morisaki, Tokyo, JP;
Yasushi Kamiya, Tokyo, JP;
Shuji Nomura, Tokyo, JP;
Masahiro Totuka, Tokyo, JP;
Tomoki Oku, Tokyo, JP;
Ryo Hattori, Tokyo, JP;
Assignee:
Canon Anelva Corporation, Kawasaki-Shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
Abstract
The silicon nitride film forming method deposits a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system.