The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2010

Filed:

Aug. 14, 2007
Applicants:

Peng Liu, Sunnyvale, CA (US);

Yu Cao, Cupertino, CA (US);

Luogi Chen, San Jose, CA (US);

Jun YE, Palo Alto, CA (US);

Inventors:

Peng Liu, Sunnyvale, CA (US);

Yu Cao, Cupertino, CA (US);

Luogi Chen, San Jose, CA (US);

Jun Ye, Palo Alto, CA (US);

Assignee:

Brion Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.


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