The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Mar. 15, 2007
Hongning Yang, Chandler, AZ (US);
Geoffrey W. Perkins, Chandler, AZ (US);
Jiang-kai Zuo, Chandler, AZ (US);
Hongning Yang, Chandler, AZ (US);
Geoffrey W. Perkins, Chandler, AZ (US);
Jiang-Kai Zuo, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A cascode amplifier (CA) () is described having a bottom transistor (T) with a relatively thin gate dielectric () and higher ratio (RB) of channel length (Lch) to width (W) and a series coupled top transistor (T) with a relatively thick gate dielectric () and a lower ratio (RT) of channel length (Lch) to width (W). An improved cascode current mirror (CCM) () is formed using a coupled pair of CAs ('), one () forming the reference current (RC) side () and the other (′) forming the mirror current side () of the CCM (). The gates (′) of the bottom transistors (T, T) are tied together and to the common node () between the series coupled bottom (T) and top (T) transistors of the RC side (), and the gates (′) of the top transistors (T, T) are coupled together and to the top drain node () of the RC side (). The area of the CCM () can be substantially shrunk without adverse affect on the matching, noise performance and maximum allowable operating voltage.