The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Jun. 30, 2004
Kimiya Aoki, Tokyo, JP;
Katsushi Suzuki, Tokyo, JP;
Asami Shirakawa, Tokyo, JP;
Kenji Tago, Tokyo, JP;
Keisuke Suzuki, Tokyo, JP;
Kazuo Saki, Yokohama, JP;
Shinji Mori, Yokohama, JP;
Kimiya Aoki, Tokyo, JP;
Katsushi Suzuki, Tokyo, JP;
Asami Shirakawa, Tokyo, JP;
Kenji Tago, Tokyo, JP;
Keisuke Suzuki, Tokyo, JP;
Kazuo Saki, Yokohama, JP;
Shinji Mori, Yokohama, JP;
Tokyo Electron Limited, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.