The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Feb. 28, 2007
Toshiharu Furukawa, Essex Junction, VT (US);
John G. Gaudiello, Waterford, NY (US);
Mark Charles Hakey, Fairfax, VT (US);
David Vaclav Horak, Essex Junction, VT (US);
Charles William Koburger, Iii, Delmar, NY (US);
Toshiharu Furukawa, Essex Junction, VT (US);
John G. Gaudiello, Waterford, NY (US);
Mark Charles Hakey, Fairfax, VT (US);
David Vaclav Horak, Essex Junction, VT (US);
Charles William Koburger, III, Delmar, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for simultaneously forming multiple line-widths, one of which is less than that achievable employing conventional lithographic techniques. The method includes providing a structure which includes a memory layer and a sidewall image transfer (SIT) layer on top of the memory layer. Then, the SIT layer is patterned resulting in a SIT region. Then, the SIT region is used as a blocking mask during directional etching of the memory layer resulting in a first memory region. Then, a side wall of the SIT region is retreated a retreating distance D in a reference direction resulting in a SIT portion. Said patterning comprises a lithographic process. The retreating distance D is less than a critical dimension CD associated with the lithographic process. The SIT region includes a first dimension Wand a second dimension Win the reference direction, wherein CD<W<2D<W