The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Oct. 26, 2007
Ling Chen, Sunnyvale, CA (US);
Vincent Ku, San Jose, CA (US);
Dien-yeh Wu, San Jose, CA (US);
Hua Chung, San Jose, CA (US);
Alan Ouye, San Mateo, CA (US);
Norman Nakashima, Sunnyvale, CA (US);
Mei Chang, Saratoga, CA (US);
Ling Chen, Sunnyvale, CA (US);
Vincent Ku, San Jose, CA (US);
Dien-Yeh Wu, San Jose, CA (US);
Hua Chung, San Jose, CA (US);
Alan Ouye, San Mateo, CA (US);
Norman Nakashima, Sunnyvale, CA (US);
Mei Chang, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments as described herein provide an apparatus and a method for performing an atomic layer deposition process. In one embodiment, a deposition chamber assembly contains a substrate support having a substrate receiving surface, and a chamber lid containing a tapered passageway extending from a central portion of the chamber lid, and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The system also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve. In one example, the gas source is a gas box assembly which is attached to the deposition chamber by at least one disconnect fitting and contains an inlet tube directed away from the gas outlet.