The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Mar. 02, 2007
Anton Mauder, Kolbermoor, DE;
Hans-joachim Schulze, Ottobrunn, DE;
Frank Pfirsch, Munich, DE;
Elmar Falck, Ottobrunn, DE;
Josef Lutz, Chemnitz, DE;
Anton Mauder, Kolbermoor, DE;
Hans-Joachim Schulze, Ottobrunn, DE;
Frank Pfirsch, Munich, DE;
Elmar Falck, Ottobrunn, DE;
Josef Lutz, Chemnitz, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.