The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Jul. 18, 2008
David Paul Agnello, Wappingers Falls, NY (US);
Mary Conroy Bushey, South Burlington, VT (US);
Donna K. Johnson, Underhill, VT (US);
Jerome Brett Lasky, Essex Junction, VT (US);
Peter James Lindgren, Burlington, VT (US);
Kirk David Peterson, Essex Junction, VT (US);
David Paul Agnello, Wappingers Falls, NY (US);
Mary Conroy Bushey, South Burlington, VT (US);
Donna K. Johnson, Underhill, VT (US);
Jerome Brett Lasky, Essex Junction, VT (US);
Peter James Lindgren, Burlington, VT (US);
Kirk David Peterson, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A structure. The structure may include a layer of cobalt disilicide that is substantially free of cobalt monosilicide and there is substantially no stringer of an oxide of titanium on the layer of cobalt disilicide. The structure may include a substrate that includes: an insulated-gate field effect transistor (FET) that includes a source, a drain, and a gate; a first layer of cobalt disilicide on the source, said first layer having substantially no cobalt monosilicide, and said first layer having substantially no stringer of an oxide of titanium thereon; a second layer of cobalt disilicide on the drain, said second layer having substantially no cobalt monosilicide having substantially no stringer of an oxide of titanium thereon; and a third layer of cobalt disilicide on the gate, said third layer having substantially no cobalt monosilicide and having substantially no stringer of an oxide of titanium thereon.