The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Mar. 03, 2006
Thomas Goebel, München, DE;
Johann Helneder, Landsham, DE;
Heinrich Körner, Bruckmühl, DE;
Andrea Mitchell, München, DE;
Markus Schwerd, Holzkirchen, DE;
Martin Seck, München, DE;
Holger Torwesten, Neublberg, DE;
Thomas Goebel, München, DE;
Johann Helneder, Landsham, DE;
Heinrich Körner, Bruckmühl, DE;
Andrea Mitchell, München, DE;
Markus Schwerd, Holzkirchen, DE;
Martin Seck, München, DE;
Holger Torwesten, Neublberg, DE;
Infineon Technologies A.G., Munich, DE;
Abstract
An integrated circuit and fabrication method are presented. The integrated circuit includes a capacitor containing a base electrode, a covering electrode, and a dielectric between the base and covering electrodes. The dielectric contains an oxide of a material contained in the base electrode, which may be produced by anodic oxidation. A peripheral edge of the dielectric is uncovered by the covering electrode. A base layer on the capacitor includes a cutout adjacent to the dielectric. During fabrication, the base layer protects the material of the base electrode that is to be anodically oxidized from chemicals, and also protects the surrounding regions from anodic oxidation. A precision resistor may be fabricated simultaneously with the capacitor.