The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Feb. 10, 2006
Michael Beck, Poughkeepsie, NY (US);
John A. Fitzsimmons, Poughkeepsie, NY (US);
Karl Hornik, Laaber, DE;
Darryl Restaino, Modena, NY (US);
Michael Beck, Poughkeepsie, NY (US);
John A. Fitzsimmons, Poughkeepsie, NY (US);
Karl Hornik, Laaber, DE;
Darryl Restaino, Modena, NY (US);
Infineon Technologies AG, Munich, DE;
Abstract
Embodiments of the invention provide a semiconductor device having dielectric material and its method of manufacture. A method comprises a short (≦2 sec) flash activation of an ILD surface followed by flowing a precursor such as silane, DEMS, over the activated ILD surface. The precursor reacts with the activated ILD surface thereby selectively protecting the ILD surface. The protected ILD surface is resistant to plasma processing damage. The protected ILD surface eliminates the requirement of using a hard mask to protect a dielectric from plasma damage.