The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Jul. 19, 2006
Anil K. Chinthakindi, Wappingers Falls, NY (US);
Douglas D. Coolbaugh, Highland, NY (US);
Ebenezer E. Eshun, Newburgh, NY (US);
John E. Florkey, Centerville, OH (US);
Robert M. Rassel, Colchester, VT (US);
Kunal Vaed, Poughkeepsie, NY (US);
Anil K. Chinthakindi, Wappingers Falls, NY (US);
Douglas D. Coolbaugh, Highland, NY (US);
Ebenezer E. Eshun, Newburgh, NY (US);
John E. Florkey, Centerville, OH (US);
Robert M. Rassel, Colchester, VT (US);
Kunal Vaed, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A polysilicon containing resistor includes: (1) a p dopant selected from the group consisting of boron and boron difluoride; and (2) an n dopant selected from the group consisting of arsenic and phosphorus. Each of the p dopant and the n dopant has a dopant concentration from about 1e18 to about 1e21 dopant atoms per cubic centimeter. A method for forming the polysilicon resistor uses corresponding implant doses from about 1e14 to about 1e16 dopant ions per square centimeter. The p dopant and the n dopant may be provided simultaneously or sequentially. The method provides certain polysilicon resistors with a sheet resistance percentage standard deviation of less than about 1.5%, for a polysilicon resistor having a sheet resistance from about 100 to about 5000 ohms per square.