The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Jan. 27, 2006
Toru Inagaki, Sakai, JP;
Takahiro Shirahata, Sakai, JP;
Takashi Yokoyama, Sakai, JP;
Michihiro Sano, Tokyo, JP;
Naochika Horio, Tokyo, JP;
Toru Inagaki, Sakai, JP;
Takahiro Shirahata, Sakai, JP;
Takashi Yokoyama, Sakai, JP;
Michihiro Sano, Tokyo, JP;
Naochika Horio, Tokyo, JP;
Air Water Inc., , JP;
Abstract
A film forming apparatus is provided that can prevent source gases from reacting together before reaching the substrate being processed in the apparatus, minimize the influence of the radiation heat from the substrate, and make the gas behavior in the reaction chamber better for crystal film formation. The apparatus forms a film on a surface of a heated substrateby causing a first source gas and a second source gas to react together. The apparatus has a processing chamber, in which the substrateis placed. The processing chamberis divided into a heating chamberand a reaction chamberby at least the substrateso that the substrate surface can be exposed to the source gases in the reaction chamber. The apparatus further has an exhaust duct, through which the exhaust gas can be discharged. The exhaust ductfaces the exposed substrate surface and connects with the reaction chamber. The apparatus further has first supply portsand second supply ports, through which the first and second source gases respectively can be supplied independently onto the substrate surface. The supply portsandare positioned outside the exhaust duct. This enables the source gases to react immediately near the substrateso that high-quality crystal film formation can be performed on the substrate.