The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
May. 23, 2008
Nai-yuan Cheng, Taipei, TW;
Yun-ju Yang, Taichung, TW;
Cheng-hui Shen, Hsinchu County, TW;
Junhua Hong, San Jose, CA (US);
Jiong Chen, San Jose, CA (US);
Tienyu Sheng, Saratoga, CA (US);
Linuan Chen, San Jose, CA (US);
Nai-Yuan Cheng, Taipei, TW;
Yun-Ju Yang, Taichung, TW;
Cheng-Hui Shen, Hsinchu County, TW;
Junhua Hong, San Jose, CA (US);
Jiong Chen, San Jose, CA (US);
Tienyu Sheng, Saratoga, CA (US);
Linuan Chen, San Jose, CA (US);
Advanced Ion Beam Technology, Inc., Hsinchu, TW;
Advanced Ion Beam Technology, Inc., San Jose, CA (US);
Abstract
An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.