The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Jan. 19, 2006
Shun-li Lin, Hsinchu, TW;
Yun-chu Lin, Hsinchu, TW;
Wen-chung Chang, Hsinchu, TW;
Ching-yi Lee, Hsinchu, TW;
Shun-Li Lin, Hsinchu, TW;
Yun-Chu Lin, Hsinchu, TW;
Wen-Chung Chang, Hsinchu, TW;
Ching-Yi Lee, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A structure applied to a photolithographic process is provided. The structure includes at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.