The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Sep. 14, 2005
Zhiyuan YE, Cupertino, CA (US);
Yihwan Kim, Milpitas, CA (US);
Xiaowei LI, Sunnyvale, CA (US);
Ali Zojaji, Santa Clara, CA (US);
Nicholas C. Dalida, Fremont, CA (US);
Jinsong Tang, Santa Clara, CA (US);
Xiao Chen, San Jose, CA (US);
Arkadii V. Samoilov, Sunnyvale, CA (US);
Zhiyuan Ye, Cupertino, CA (US);
Yihwan Kim, Milpitas, CA (US);
Xiaowei Li, Sunnyvale, CA (US);
Ali Zojaji, Santa Clara, CA (US);
Nicholas C. Dalida, Fremont, CA (US);
Jinsong Tang, Santa Clara, CA (US);
Xiao Chen, San Jose, CA (US);
Arkadii V. Samoilov, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.