The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Oct. 05, 2005
S. M. Reza Sadjadi, Saratoga, CA (US);
Peter Cirigliano, Sunnyvale, CA (US);
Jisoo Kim, Pleasanton, CA (US);
Zhisong Huang, Fremont, CA (US);
Eric A. Hudson, Berkeley, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Peter Cirigliano, Sunnyvale, CA (US);
Jisoo Kim, Pleasanton, CA (US);
Zhisong Huang, Fremont, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.