The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Mar. 17, 2008
Applicants:
Kazuo Ogawa, Tokyo, JP;
Yoshihiro Takaishi, Tokyo, JP;
Inventors:
Kazuo Ogawa, Tokyo, JP;
Yoshihiro Takaishi, Tokyo, JP;
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device with diffused layers by impurity implantation includes forming a first mask including an opening, implanting a channel impurity for threshold voltage control using the first mask, forming a first diffused layer using the first mask by implanting a first impurity, forming a first gate wiring layer and a second gate wiring layer after removing the first mask, and forming a second diffused layer and a third diffused layer using the first gate wiring layer and the second gate wiring layer as a second mask by implanting a second impurity.