The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Mar. 03, 2009
Applicants:
Shuichi Irumata, Ibaraki, JP;
Ryo Suzuki, Ibaraki, JP;
Inventors:
Shuichi Irumata, Ibaraki, JP;
Ryo Suzuki, Ibaraki, JP;
Assignee:
Nippon Mining & Metals Co., Ltd, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 21/68 (2006.01);
U.S. Cl.
CPC ...
Abstract
A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi. The target material is superior in workability and embrittlement resistance and is suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiOfilm. A method of manufacturing the above referenced hafnium silicide target is also provided.