The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Feb. 16, 2006
Shunpei Yamazaki, Setagaya, JP;
Akihisa Shimomura, Atsugi, JP;
Hisashi Ohtani, Atsugi, JP;
Masaaki Hiroki, Atsugi, JP;
Koichiro Tanaka, Atsugi, JP;
Aiko Shiga, Atsugi, JP;
Mai Akiba, Atsugi, JP;
Kenji Kasahara, Tsukuba, JP;
Shunpei Yamazaki, Setagaya, JP;
Akihisa Shimomura, Atsugi, JP;
Hisashi Ohtani, Atsugi, JP;
Masaaki Hiroki, Atsugi, JP;
Koichiro Tanaka, Atsugi, JP;
Aiko Shiga, Atsugi, JP;
Mai Akiba, Atsugi, JP;
Kenji Kasahara, Tsukuba, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensable portion. Since the time required for laser crystallization can be reduced, it is possible to increase the substrate processing speed. By applying the above-described constitution to a conventional SLS method, a means for solving such problem in the conventional SLS method that the substrate processing efficiency is insufficient, is provided.