The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
May. 21, 2008
Byung-gil Choi, Yongin-si, KR;
Woo-yeong Cho, Suwon-si, KR;
Du-eung Kim, Yongin-si, KR;
Hyung-rok OH, Hwaseong-si, KR;
Beak-hyung Cho, Hwaseong-si, KR;
Yu-hwan RO, Seoul, KR;
Byung-Gil Choi, Yongin-si, KR;
Woo-Yeong Cho, Suwon-si, KR;
Du-Eung Kim, Yongin-si, KR;
Hyung-Rok Oh, Hwaseong-si, KR;
Beak-Hyung Cho, Hwaseong-si, KR;
Yu-Hwan Ro, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A memory system includes a resistance variable memory device, and a memory controller for controlling the resistance variable memory device. The resistance variable memory device includes a memory cell connected to a bitline, a high voltage circuit adapted to generate a high voltage from an externally provided power source voltage, where the high voltage is higher than the power source voltage, a precharging circuit adapted to charge the bitline to the power source voltage and further charge the bitline to the high voltage, a bias circuit adapted to provide a read current to the bitline with using the high voltage, and a sense amplifier adapted to detect a voltage level of the bitline with using the high voltage.