The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Nov. 30, 2006
Yuji Harada, Joetsu, JP;
Jun Hatakeyama, Joetsu, JP;
Yoshio Kawai, Joetsu, JP;
Masaru Sasago, Osaka, JP;
Masayuki Endo, Osaka, JP;
Kazuhiko Maeda, Tokyo, JP;
Haruhiko Komoriya, Kawagoe, JP;
Michitaka Ootani, Kawagoe, JP;
Yuji Harada, Joetsu, JP;
Jun Hatakeyama, Joetsu, JP;
Yoshio Kawai, Joetsu, JP;
Masaru Sasago, Osaka, JP;
Masayuki Endo, Osaka, JP;
Kazuhiko Maeda, Tokyo, JP;
Haruhiko Komoriya, Kawagoe, JP;
Michitaka Ootani, Kawagoe, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Panasonic Corporation, Kadoma-Shi, JP;
Central Glass Co., Ltd., Ube-Shi, JP;
Abstract
A polymer comprising recurring units (2) obtained through polymerization of an ester compound of formula (1) is used to form a resist composition. Ris F or C-Cfluoroalkyl, Ris H or C-Calkyl, Ris O or C-Calkylene, Rand Reach are H or C-Calkyl or fluoroalkyl, and Ris H or an acid labile group. The resist composition, when processed by ArF lithography, has advantages including improved resolution, transparency, minimal line edge roughness, and etch resistance. The resist composition exhibits better performance when processed by ArF immersion lithography with liquid interposed between a projection lens and a wafer.