The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Nov. 28, 2007
Sheng-hung LI, Hsinchu, TW;
Siew-seong Tan, Hsinchu, TW;
Cheng-yen Liu, Hsinchu, TW;
Li-ken Yeh, Hsinchu, TW;
Sheng-Hung Li, Hsinchu, TW;
Siew-Seong Tan, Hsinchu, TW;
Cheng-Yen Liu, Hsinchu, TW;
Li-Ken Yeh, Hsinchu, TW;
MEMSmart Semiconductor Corp., Hsinchu, TW;
Abstract
A method for fabricating a microstructure is to form at least one insulation layer including a micro-electro-mechanical structure therein over an upper surface of a silicon substrate. The micro-electro-mechanical structure includes at least one microstructure and a metal sacrificial structure that are independent with each other. In the metal sacrificial structure are formed a plurality of metal layers and a plurality of metal via layers connected to the respective metal layers. A barrier layer is formed over an upper surface of the insulation layer, and an etching stop layer is subsequently formed over a lower surface of the silicon substrate. An etching operation is carried out from the lower surface of the silicon substrate to form a space corresponding to the micro-electro-mechanical structure, and then the metal sacrificial structure is etched, thus achieving a microstructure suspension.