The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2010

Filed:

Apr. 29, 2008
Applicants:

Sung-min Kim, Incheon Metropolitan, KR;

Eun-jung Yun, Seoul, KR;

Dong-won Kim, Gyeonggi-do, KR;

Jae-man Yoon, Seoul, KR;

Inventors:

Sung-Min Kim, Incheon Metropolitan, KR;

Eun-Jung Yun, Seoul, KR;

Dong-Won Kim, Gyeonggi-do, KR;

Jae-Man Yoon, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

In an embodiment, a 3-dimensional flash memory device includes: a gate extending in a vertical direction on a semiconductor substrate; a charge storing layer surrounding the gate; a silicon layer surrounding the charge storing layer; a channel region vertically formed in the silicon layer; and source/drain regions vertically formed on both sides of the channel region in the silicon layer. Integration can be improved by storing data in a 3-dimensional manner; a 2-bit operation can be performed by providing transistors on both sides of the gate.


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