The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7662719 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 16, 2010

Filed:

Jul. 12, 2006
Applicants:

Nishant Sinha, Boise, ID (US);

Dinesh Chopra, Boise, ID (US);

Inventors:

Nishant Sinha, Boise, ID (US);

Dinesh Chopra, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for substantially simultaneously polishing a copper conductive structure of a semiconductor device structure and an adjacent barrier layer. The method includes use of a polishing pad with a slurry solution in which copper and a material, such as tungsten, of the barrier layer are removed at substantially the same rate. The slurry is formulated so as to oxidize copper and a material of the barrier layer at substantially the same rates. Thus, copper and the barrier layer material have substantially the same oxidation energies in the slurry. Systems for substantially polishing copper conductive structures and adjacent barrier structures on semiconductor device structures are also disclosed.


Find Patent Forward Citations

Loading…