The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2010
Filed:
Sep. 08, 2006
Reinhard Schauer, Laufen, DE;
Thorsten Schneppensieper, Emmerting, DE;
Reinhard Schauer, Laufen, DE;
Thorsten Schneppensieper, Emmerting, DE;
Siltronic AG, Munich, DE;
Abstract
Epitaxially coated silicon wafers, are coated individually in an epitaxy reactor by placing a wafer on a susceptor, pretreating under a hydrogen atmosphere, in and then with addition of an etching medium, and coating epitaxially on a polished front side, wherein an etching treatment of the susceptor is effected after a specific number of epitaxial coatings, and the susceptor is then hydrophilized. Silicon wafer produced thereby have a maximum local flatness value SFQRof 0.01 μm to 0.035 μm relative to at least 99% of the partial regions of an area grid of measurement windows having a size of 26×8 mmon the front side of the silicon wafer with an edge exclusion of 2 mm.