The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2010
Filed:
Mar. 26, 2007
Xianmin Tang, San Jose, CA (US);
Hua Chung, San Jose, CA (US);
Rongjun Wang, Cupertino, CA (US);
Praburam Gopalraja, San Jose, CA (US);
Jick M. Yu, San Jose, CA (US);
Jenn Yue Wang, Fremont, CA (US);
Xianmin Tang, San Jose, CA (US);
Hua Chung, San Jose, CA (US);
Rongjun Wang, Cupertino, CA (US);
Praburam Gopalraja, San Jose, CA (US);
Jick M. Yu, San Jose, CA (US);
Jenn Yue Wang, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen.