The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7659167 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 09, 2010

Filed:

Jun. 02, 2006
Applicants:

Tzung-ting Han, I-Lan, TW;

Chin-ta Su, Yunlin, TW;

Yun-chi Yang, Hsin-Chu, TW;

Inventors:

Tzung-Ting Han, I-Lan, TW;

Chin-Ta Su, Yunlin, TW;

Yun-Chi Yang, Hsin-Chu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

This invention provides a method for forming polysilicon by using silane with introducing hydrogen, such that polysilicon is microcrystalline. This microcrystal polysilicon can be applied to floating gate of flash memory to improve the character of flash memory.


Find Patent Forward Citations

Han, Tzung-Ting. (2010). Method for improving the performance of flash memory by using microcrystalline silicon film as a floating gate (U.S. Patent No. 7659167). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7659167

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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