The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2010
Filed:
Jun. 07, 2005
James J. Bucchignano, Yorktown Heights, NY (US);
Wu-song S. Huang, Poughkeepsie, NY (US);
David P. Klaus, Yorktown Heights, NY (US);
Lidija Sekaric, Mount Kisco, NY (US);
Raman G. Viswanathan, Briarcliff Manor, NY (US);
James J. Bucchignano, Yorktown Heights, NY (US);
Wu-Song S. Huang, Poughkeepsie, NY (US);
David P. Klaus, Yorktown Heights, NY (US);
Lidija Sekaric, Mount Kisco, NY (US);
Raman G. Viswanathan, Briarcliff Manor, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Non-chemically amplified radiation sensitive resist compositions containing silicon are especially useful for lithographic applications, especially E-beam lithography. More particularly, radiation-sensitive resist compositions comprising a polymer having at least one silicon-containing moiety and at least one radiation-sensitive moiety cleavable upon radiation exposure to form aqueous base soluble moiety can be used to pattern sub-50 nm features with little or no blur.