The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Jan. 12, 2006
Applicants:
Akihiro Kikuchi, Yamanashi, JP;
Yuichiro Sakamoto, Tokyo, JP;
Takashi Tsunoda, Yamanashi, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A difference in etching rate between the coated silicon based insulating film and any of other kinds of silicon-based insulating films is reduced by using nitrogen gas as a part of the etching gas. Therefore, the underlying film may not be exposed to the etching gas for a long time, so that degradation or deterioration of the underlying film can be prevented.