The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Apr. 20, 2007
Ethan Harrison Cannon, Essex Junction, VT (US);
Toshiharu Furukawa, Essex Junction, VT (US);
John Gerard Gaudiello, Poughkeepsie, NY (US);
Mark Charles Hakey, Fairfax, VT (US);
Steven John Holmes, Guilderland, NY (US);
David Vaclav Horak, Essex Junction, VT (US);
Charles William Koburger, Iii, Delmar, NY (US);
Jack Allan Mandelman, Flat Rock, NC (US);
William Robert Tonti, Essex Junction, VT (US);
Ethan Harrison Cannon, Essex Junction, VT (US);
Toshiharu Furukawa, Essex Junction, VT (US);
John Gerard Gaudiello, Poughkeepsie, NY (US);
Mark Charles Hakey, Fairfax, VT (US);
Steven John Holmes, Guilderland, NY (US);
David Vaclav Horak, Essex Junction, VT (US);
Charles William Koburger, III, Delmar, NY (US);
Jack Allan Mandelman, Flat Rock, NC (US);
William Robert Tonti, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Hybrid substrates characterized by semiconductor islands of different crystal orientations and methods of forming such hybrid substrates. The methods involve using a SIMOX process to form an insulating layer. The insulating layer may divide the islands of at least one of the different crystal orientations into mutually aligned device and body regions. The body regions may be electrically floating relative to the device regions.