The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
May. 26, 2004
Yoshitaka Hamada, Niigata-ken, JP;
Fujio Yagihashi, Niigata-ken, JP;
Mutsuo Nakashima, Niigata-ken, JP;
Kazumi Noda, Niigata-ken, JP;
Katsuya Takemura, Niigata-ken, JP;
Yoshitaka Hamada, Niigata-ken, JP;
Fujio Yagihashi, Niigata-ken, JP;
Mutsuo Nakashima, Niigata-ken, JP;
Kazumi Noda, Niigata-ken, JP;
Katsuya Takemura, Niigata-ken, JP;
Shin-Etsu Chemical Co., Ltd., Niigata-Ken, JP;
Abstract
Provided is a positive resist material, particularly a chemically amplified positive resist material having higher sensitivity, higher resolution, a higher exposure latitude and better process adaptability than conventional positive resist materials, and providing a good pattern profile after exposure, particularly having lessened line edge roughness and exhibiting excellent etching resistance. These materials may contain, preferably an organic solvent and acid generator, more preferably a dissolution inhibitor or a basic compound and/or a surfactant. Provided is a positive resist material comprising a polymer comprising at least one monomer unit selected from a group consisting of a monomer unit (A), a monomer unit (B) and a monomer unit (C) represented by the following formula (1); and having a glass transition temperature (Tg) of 100° C. or greater.