The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7651733 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 26, 2010

Filed:

Apr. 20, 2006
Applicants:

Kazuhide Hasebe, Nirasaki, JP;

Hiroyuki Yamamoto, Oshu, JP;

Takahito Umehara, Nirasaki, JP;

Masato Kawakami, Nirasaki, JP;

Inventors:

Kazuhide Hasebe, Nirasaki, JP;

Hiroyuki Yamamoto, Oshu, JP;

Takahito Umehara, Nirasaki, JP;

Masato Kawakami, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.


Find Patent Forward Citations

Hasebe, Kazuhide. (2010). Method for forming a vapor phase growth film (U.S. Patent No. 7651733). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7651733

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