The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
Mar. 02, 2006
Thomas J. Kropewnicki, San Mateo, CA (US);
Theodoros Panagopoulos, Cupertino, CA (US);
Nicolas Gani, Milpitas, CA (US);
Wilfred Pau, Santa Clara, CA (US);
Meihua Shen, Fremont, CA (US);
John P. Holland, San Jose, CA (US);
Thomas J. Kropewnicki, San Mateo, CA (US);
Theodoros Panagopoulos, Cupertino, CA (US);
Nicolas Gani, Milpitas, CA (US);
Wilfred Pau, Santa Clara, CA (US);
Meihua Shen, Fremont, CA (US);
John P. Holland, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the invention generally provide methods for etching a substrate. In one embodiment, the method includes determining a substrate temperature target profile that corresponds to a uniform deposition rate of etch by-products on a substrate, preferentially regulating a temperature of a first portion of a substrate support relative to a second portion of the substrate support to obtain the substrate temperature target profile on the substrate, and etching the substrate on the preferentially regulated substrate support. In another embodiment, the method includes providing a substrate in a processing chamber having a selectable distribution of species within the processing chamber and a substrate support with lateral temperature control, wherein a temperature profile induced by the substrate support and a selection of species distribution comprise a control parameter set, etching a first layer of material and etching a second layer of material respectively using different control parameter sets.