The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2010

Filed:

May. 15, 2007
Applicants:

Ching-jen Han, Taichung, TW;

Wen-shun Lo, Hsinchu County, TW;

Yung-han Chiu, Taichung, TW;

Inventors:

Ching-Jen Han, Taichung, TW;

Wen-Shun Lo, Hsinchu County, TW;

Yung-Han Chiu, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing an opening is described. First, a substrate including a conductive portion and a dielectric layer both formed thereon is provided. The conductive portion at least includes a conductive layer and a passivation layer from bottom-up, and the dielectric layer covers the conductive portion. A first dry etching step is then performed to form an opening on the passivation layer by using a reactive gas containing a high polymer gas. The bottom of the opening has an initial dimension, and an obtuse angle is included by the bottom of the opening and an inner sidewall of the opening. Next, an opening enlarging step is performed to reach a target dimension of the bottom of the opening. The target dimension is larger than the initial dimension and to the least extent the conductive layer is not exposed by the opening.


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