The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Mar. 30, 2005
Camelia Rusu, Fremont, CA (US);
Zhisong Huang, Fremont, CA (US);
Mukund Srinivasan, Fremont, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Aaron Eppler, Fremont, CA (US);
Camelia Rusu, Fremont, CA (US);
Zhisong Huang, Fremont, CA (US);
Mukund Srinivasan, Fremont, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Aaron Eppler, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising Oand a sulfur component gas comprising at least one of HS and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.