The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Jun. 20, 2008
Development or removal of block copolymer or pmma-b-s-based resist using polar supercritical solvent
Matthew E. Colburn, Hopewell Junction, NY (US);
Dmitriy Shneyder, Hopewell Junction, NY (US);
Shahab Siddiqui, Wappingers Falls, NY (US);
Matthew E. Colburn, Hopewell Junction, NY (US);
Dmitriy Shneyder, Hopewell Junction, NY (US);
Shahab Siddiqui, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods of developing or removing a select region of block copolymer films using a polar supercritical solvent to dissolve a select portion are disclosed. In one embodiment, the polar supercritical solvent includes chlorodifluoromethane, which may be exposed to the block copolymer film using supercritical carbon dioxide (CO) as a carrier or chlorodiflouromethane itself in supercritical form. The invention also includes a method of forming a nano-structure including exposing a polymeric film to a polar supercritical solvent to develop at least a portion of the polymeric film. The invention also includes a method of removing a poly(methyl methacrylate-b-styrene) (PMMA-b-S) based resist using a polar supercritical solvent.