The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2010

Filed:

Oct. 16, 2007
Applicants:

Colin Brodsky, Salt Point, NY (US);

Mary Jane Brodsky, Salt Point, NY (US);

Sean Burns, Hopewell Junction, NY (US);

Habib Hichri, Poughkeepsie, NY (US);

Inventors:

Colin Brodsky, Salt Point, NY (US);

Mary Jane Brodsky, Salt Point, NY (US);

Sean Burns, Hopewell Junction, NY (US);

Habib Hichri, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01R 31/26 (2006.01); G01N 21/00 (2006.01); G01C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Inspection methods. A method includes adhering an optical blocking layer directly onto and in direct mechanical contact with a semiconductor process wafer, the blocking layer being substantially opaque to a range of wavelengths of light; applying at least one layer over the blocking layer; and inspecting optically at least one wavelength at least one inspection area, the blocking layer extending substantially throughout the inspection area. An inspection method including adhering an optical absorbing layer to a semiconductor process wafer, where the absorbing layer is configured to substantially absorb a range of wavelengths of light; applying at least one layer over the absorbing layer; and inspecting optically at least one wavelength at least one inspection area of the process wafer. A manufacturing method including ascertaining if a defect is present within a photoresist layer, and changing a semiconductor manufacturing process to prevent the defect, if the defect is present.


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