The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Sep. 17, 2004
Masaru Sasaki, Amagasaki, JP;
Satohiko Hoshino, Nirasaki, JP;
Shinji Ide, Amagasaki, JP;
Yusaku Kashiwagi, Amagasaki, JP;
Masaru Sasaki, Amagasaki, JP;
Satohiko Hoshino, Nirasaki, JP;
Shinji Ide, Amagasaki, JP;
Yusaku Kashiwagi, Amagasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.