The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Jan. 26, 2006
Chia-jen Chen, Jhudong Township, Hsinchu County, TW;
Hsin-chang Lee, Hsin-Chu Xian, TW;
Hung Chang Hsieh, Hsin-Chu, TW;
Chia-Jen Chen, Jhudong Township, Hsinchu County, TW;
Hsin-Chang Lee, Hsin-Chu Xian, TW;
Hung Chang Hsieh, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Disclosed is an improved aperture design for improving critical dimension accuracy and electron beam lithography. A pattern may be created on a reticle by passing an electron beam through a first aperture having a first shape comprising an upper horizontal edge, a lower horizontal edge, a vertical edge, an upper bevel, and a lower bevel, wherein a portion of the electron beam is projected onto a second aperture. The portion of the electronic beam is passed through the second aperture having a second shape, wherein the second shape is the first shape rotated horizontally by 180 degrees, and an overlapped portion of the first and second aperture is exposed on a surface of the reticle to create a pattern.