The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Jun. 27, 2005
Ming LI, West Linn, OR (US);
Bart Van Schravendijk, Sunnyvale, CA (US);
Tom Mountsier, San Jose, CA (US);
Chiu Chi, San Jose, CA (US);
Kevin Ilcisin, Beaverton, OR (US);
Julian Hsieh, Pleasanton, CA (US);
Ming Li, West Linn, OR (US);
Bart Van Schravendijk, Sunnyvale, CA (US);
Tom Mountsier, San Jose, CA (US);
Chiu Chi, San Jose, CA (US);
Kevin Ilcisin, Beaverton, OR (US);
Julian Hsieh, Pleasanton, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, a substantially hermetic layer with acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free moisture barrier anti-reflective layer produced by this technique improves plasma etch of features such as vias in subsequent processing steps.