The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2010

Filed:

Aug. 07, 2006
Applicants:

Peter L. G. Ventzek, Austin, TX (US);

Lee Chen, Cedar Creek, TX (US);

Akira Koshiishi, Kofu, JP;

Ikuo Sawada, Kanagawa, JP;

Inventors:

Peter L. G. Ventzek, Austin, TX (US);

Lee Chen, Cedar Creek, TX (US);

Akira Koshiishi, Kofu, JP;

Ikuo Sawada, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with an oxygen-containing plasma or halogen-containing plasma or a noble gas plasma or a combination of two or more thereof prior to proceeding with the etching process.


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