The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Nov. 16, 2004
Nitin K. Ingle, Santa Clara, CA (US);
Zheng Yuan, Fremont, CA (US);
Vikash Banthia, Mountain View, CA (US);
Xinyun Xia, Sunnyvale, CA (US);
Hali J. L. Forstner, Belmont, CA (US);
Rong Pan, San Jose, CA (US);
Nitin K. Ingle, Santa Clara, CA (US);
Zheng Yuan, Fremont, CA (US);
Vikash Banthia, Mountain View, CA (US);
Xinyun Xia, Sunnyvale, CA (US);
Hali J. L. Forstner, Belmont, CA (US);
Rong Pan, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.