The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Jan. 23, 2007
Guohong Zhang, Plano, TX (US);
Stephen J. Demoor, Allen, TX (US);
Guohong Zhang, Plano, TX (US);
Stephen J. DeMoor, Allen, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present application is directed to a method for determining photolithography focus errors during production of a device. The method comprises providing a substrate and forming a photoresist pattern on the substrate. The photoresist pattern comprises a device pattern and one or more blocking scheme patterns. The process further comprises performing a device manufacturing process using the photoresist pattern as a mask to form sensor windows on the substrate. One or more focus error sensors are formed in the sensor windows. Focus errors are determined using the focus error sensors. Other embodiments of the present application are directed to wafers comprising one or more focus error sensors positioned in sensor windows.